Flexible metal-insulator-metal capacitor using plasma enhanced binary hafnium-zirconium-oxide as gate dielectric layer

Jagan Singh Meena, Min Ching Chu, Jitendra N. Tiwari, Hsin Chiang You, Chung Hsin Wu, Fu-Hsiang Ko*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have used a sol-gel spin-coating process to fabricate a new metal-insulator-metal capacitor comprising 10-nm thick binary hafnium-zirconium-oxide (HfxZr1-xO2) film on a flexible polyimide (PI) substrate. The surface morphology of this HfxZr1-xO2 film was investigated using atomic force microscopy and scanning electron microscopy, which confirmed that continuous and crack-free film growth had occurred on the PI. After oxygen plasma pre-treatment and subsequent annealing at 250 °C, the film on the PI substrate exhibited a low leakage current density of 3.22 × 10-8 A/cm2 at -10 V and maximum capacitance densities of 10.36 fF/μm2 at 10 kHz and 9.42 fF/μm2 at 1 MHz. The as-deposited sol-gel film was oxidized when employing oxygen plasma at a relatively low temperature (∼250 °C), thereby enhancing the electrical performance.

Original languageEnglish
Pages (from-to)652-656
Number of pages5
JournalMicroelectronics Reliability
Volume50
Issue number5
DOIs
StatePublished - 1 May 2010

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