Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature

Hsiao Hsuan Hsu, Chun-Yen Chang, Chun-Hu Cheng

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin-film transistor (TFT) using room-temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub-threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm(2)/V s, and a large I-on/I-off ratio of 1.7 x 10(6). The low operation voltage, small subthreshold swing and high mobility could be ascribed to the combination of high-kappa TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low-temperature and low-power portable electronics. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Original languageEnglish
Pages (from-to)285-288
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Volume7
Issue number4
DOIs
StatePublished - Apr 2013

Keywords

  • InGaZnO; thin-film transistors; TiO2; Y2O3
  • GALLIUM-ZINC-OXIDE; PERFORMANCE

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