Flexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectrics

Hsiao-Hsuan Hsu, Chun-Yen Chang, Chun-Hu Cheng, Shu Hung Yu, Ching Yuan Su

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm(2)/Vs, and a good I-on/I-off ratio of 3.7x10(5). The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-kappa TiO2.
Original languageEnglish
Title of host publicationIEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
DOIs
StatePublished - 2013

Keywords

  • thin film transistor (TFT); flexible; GeO2; TiO2

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    Hsu, H-H., Chang, C-Y., Cheng, C-H., Yu, S. H., & Su, C. Y. (2013). Flexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectrics. In IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) https://doi.org/10.1109/EDSSC.2013.6628218