@inproceedings{82f276505c9c400ea67ac9011a771fe0,
title = "Flash read disturb management using adaptive cell bit-density with in-place reprogramming",
abstract = "Read disturbance is a circuit-level noise induced by flash read operations. Read refreshing employs data migration to prevent read disturbance from corrupting useful data. However, it costs frequent block erasure under read-intensive workloads. Inspired by software-controlled cell bit-density, we propose to reserve selected threshold voltage levels as guard levels to extend the tolerance of read disturbance. Blocks with guard levels have a low cell bit-density, but they can store frequently read data without frequent read refreshing. We further propose to convert a high-density block into a low-density one using in-place reprogramming to reduce the need for data migration. Our approach reduced the number of blocks erased due to read refreshing by up to 85% and the average read response time by up to 22%.",
author = "Wu, {Tai Chou} and Ma, {Yu Ping} and Li-Pin Chang",
year = "2018",
month = apr,
day = "19",
doi = "10.23919/DATE.2018.8342030",
language = "English",
series = "Proceedings of the 2018 Design, Automation and Test in Europe Conference and Exhibition, DATE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "325--330",
booktitle = "Proceedings of the 2018 Design, Automation and Test in Europe Conference and Exhibition, DATE 2018",
address = "United States",
note = "null ; Conference date: 19-03-2018 Through 23-03-2018",
}