Flash read disturb management using adaptive cell bit-density with in-place reprogramming

Tai Chou Wu, Yu Ping Ma, Li-Pin Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Read disturbance is a circuit-level noise induced by flash read operations. Read refreshing employs data migration to prevent read disturbance from corrupting useful data. However, it costs frequent block erasure under read-intensive workloads. Inspired by software-controlled cell bit-density, we propose to reserve selected threshold voltage levels as guard levels to extend the tolerance of read disturbance. Blocks with guard levels have a low cell bit-density, but they can store frequently read data without frequent read refreshing. We further propose to convert a high-density block into a low-density one using in-place reprogramming to reduce the need for data migration. Our approach reduced the number of blocks erased due to read refreshing by up to 85% and the average read response time by up to 22%.

Original languageEnglish
Title of host publicationProceedings of the 2018 Design, Automation and Test in Europe Conference and Exhibition, DATE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages325-330
Number of pages6
ISBN (Electronic)9783981926316
DOIs
StatePublished - 19 Apr 2018
Event2018 Design, Automation and Test in Europe Conference and Exhibition, DATE 2018 - Dresden, Germany
Duration: 19 Mar 201823 Mar 2018

Publication series

NameProceedings of the 2018 Design, Automation and Test in Europe Conference and Exhibition, DATE 2018
Volume2018-January

Conference

Conference2018 Design, Automation and Test in Europe Conference and Exhibition, DATE 2018
CountryGermany
CityDresden
Period19/03/1823/03/18

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