First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM

Fu Kuo Hsueh, Chang Hong Shen, Jia Min Shieh, Kai Shin Li, Hsiu Chih Chen, Wen Hsien Huang, Hsing Hsiang Wang, Chih Chao Yang, Tung Ying Hsieh, Chang Hsien Lin, Bo Yuan Chen, Yu Shao Shiao, Guo Wei Huang, Oi Ying Wong, Po-Hung Chen, Wen Kuan Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

For the first time, we report low-cost heterogeneously integrated sub-40nm epi-like Si monolithic internet of thins (IoT) 3D+-IC with wireless communication, light-electricity power management and vertical ReRAM (VRRAM) modules. High current driving multi-channel 3D+ UTB-MOSFETs (600μA/282μA@VG= ± 1V for 10-channel P/N FETs) was fabricated by low thermal budget super-CMP-planarized visible laser-crystallized epi-like Si channel and CO2 far-infrared laser annealing (CO2-FIR-LA) activation technologies that support a 6.8GHz high frequency VCO circuits, 0.5V low-voltage power management circuit and drives 20nm 4-layer VRRAM (Set/Reset <1.2V/1.8V, 3-bits/cell). This unique TSV-free monolithic 3D+IC process provides the superiority in 3D hetero-integration; we successfully integrate these circuits in a low cost, small footprint, fully functionalized 3D+ IoT chip.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2.3.1-2.3.4
ISBN (Electronic)9781509039012
DOIs
StatePublished - 31 Jan 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 3 Dec 20167 Dec 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period3/12/167/12/16

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