First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge

Chen Han Chou*, An Shih Shih, Shao Cheng Yu, Yu Hsi Lin, Yi He Tsai, Chiung-Yuan Lin, Wen Kuan Yeh, Chao-Hsin Chien

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This letter represents the first direct experimental demonstrations and mechanism proposal regarding abnormal palladium diffusion into germanium (Ge). Our experiments indicated that excess Ge atoms among palladium germanide alloy formation indirectly induce the abnormal out-diffusion of mass palladium atoms into Ge. Consequently, palladium germanide alloy on both n-type and p-type Ge form ohmic-like Schottky junctions. To identify this phenomenon, first-principle calculations and technology computer-aided design simulation were used to evaluate the electrical influence of palladium atoms in Ge. We discovered that the activated palladium atoms in Ge induce large midgap bulk-trap states, which contribute to a severe increment of trap-assisted tunneling current at the palladium germanide/Ge junction.

Original languageEnglish
Article number8470143
Pages (from-to)1632-1635
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number11
DOIs
StatePublished - 1 Nov 2018

Keywords

  • First-principles calculations
  • Schottky junction
  • fermi-level pinning effect
  • germanium
  • palladium germanide
  • technology computer-aided design
  • trap-assisted tunneling

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