First demonstration of ultrafast laser annealed monolithic 3D gate-all-around CMOS logic and FeFET memory with near-memory-computing macro

Fu Kuo Hsueh, Je Min Hung, Sheng Po Huang, Yen Hsiang Huang, Cheng Xin Xue, Chang Hong Shen*, Jia Min Shieh, Wen Cheng Chiu, Chao Cheng Lin, Bo Yuan Chen, Szu Ching Liu, Shih Wei Chen, Deng Yan Niou, Wen Hsien Huang, Kai Shin Li, Kun Kin Lin, Da Chiang Chang, Kun Ming Chen, Guo Wei Huang, Ci Ling PanMeng Fan Chang, Chenming Hu, Wen Kuan Yeh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

For the first time, ultrafast laser annealed BEOL gate-all-around (GAA) transistor and FeFET memory were demonstrated with monolithic 3D near-memory-computing (NMC) circuit. The GAA MOSFETs employing ultrafast picosecond visible laser dopant activation exhibit record-high Ion (nFETs=407 uA/um, pFETs=345 uA/um). The BEOL FeFETs memory exhibits large memory window ΔVth = 1.2V, more than 106 cycle endurance. Moreover, the 3D stackability of the GAA MOSFETs and FeFET memory bit cell enable reduces the area of the NMC circuitry and improve the readout throughput.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages40.4.1-40.4.4
ISBN (Electronic)9781728188881
DOIs
StatePublished - 12 Dec 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 12 Dec 202018 Dec 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
CountryUnited States
CityVirtual, San Francisco
Period12/12/2018/12/20

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