FinFET with encased air-gap spacers for high-performance and low-energy circuits

Angada B. Sachid; Yao Min Huang; Yi Ju Chen; Chun Chi Chen; Darsen D. Lu; Min Cheng Chen; Chen-Ming Hu

doi:10.1109/LED.2016.2628768

FinFET with encased air-gap spacers for high-performance and low-energy circuits

Angada B. Sachid^*, Yao Min Huang, Yi Ju Chen, Chun Chi Chen, Darsen D. Lu, Min Cheng Chen, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We experimentally demonstrate n-channel bulk FinFET with encased air-gap spacers. Encased air gap in the spacer region is formed by depositing carbon sidewalls, encasing them with silicon nitride (SiN) film and finally removing carbon using mild oxygen plasma. We show that the drive current of air-spacer FinFET is improved by about 40% compared with the baseline bulk FinFET with SiN spacers likely due to enhanced tensile stress in the channel. The parasitic capacitance and ring oscillator delay of FinFET with air-spacers is about 25% and 40% lower compared with that with SiN spacers.

Original language	English
Article number	7744575
Pages (from-to)	16-19
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	1
DOIs	https://doi.org/10.1109/LED.2016.2628768
State	Published - 1 Jan 2017

Keywords

air spacer
FinFET
low-κ spacer
parasitic capacitance.
vacuum spacer

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title = "FinFET with encased air-gap spacers for high-performance and low-energy circuits",

abstract = "We experimentally demonstrate n-channel bulk FinFET with encased air-gap spacers. Encased air gap in the spacer region is formed by depositing carbon sidewalls, encasing them with silicon nitride (SiN) film and finally removing carbon using mild oxygen plasma. We show that the drive current of air-spacer FinFET is improved by about 40% compared with the baseline bulk FinFET with SiN spacers likely due to enhanced tensile stress in the channel. The parasitic capacitance and ring oscillator delay of FinFET with air-spacers is about 25% and 40% lower compared with that with SiN spacers.",

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AU - Lu, Darsen D.

AU - Chen, Min Cheng

AU - Hu, Chen-Ming

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AB - We experimentally demonstrate n-channel bulk FinFET with encased air-gap spacers. Encased air gap in the spacer region is formed by depositing carbon sidewalls, encasing them with silicon nitride (SiN) film and finally removing carbon using mild oxygen plasma. We show that the drive current of air-spacer FinFET is improved by about 40% compared with the baseline bulk FinFET with SiN spacers likely due to enhanced tensile stress in the channel. The parasitic capacitance and ring oscillator delay of FinFET with air-spacers is about 25% and 40% lower compared with that with SiN spacers.

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