FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation

Vita Pi Ho Hu; Ming Long Fan; Chien Yu Hsieh; Pin Su; Ching Te Chuang

doi:10.1109/SISPAD.2010.5604510

FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation

Vita Pi Ho Hu, Ming Long Fan, Chien Yu Hsieh, Pin Su, Ching Te Chuang

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper analyzes the impact of intrinsic process variation and NBTI/PBTI induced time-dependent variations on the stability/variability of 6T FinFET SRAM cells with various surface orientations. Due to quantum confinement, (110)- oriented pull-down devices with fin Line Edge Roughness (LER) show larger Vread,0 and Vtrip variations, thus degrading RSNM and its variability. (100)-oriented pull-up devices with fin LER show larger Vwrite,0 and Vtrip variations, hence degrade the variability of WSNM. The combined effects of intrinsic process variation and NBTI/PBTI induced variations have been examined to optimize the FinFET SRAM cells. Pull-up devices with (110) orientation suffer larger NBTI, resulting in large Vtrip variation and significant degradation of RSNM. Our study indicates that consideration of NBTI/PBTI induced temporal variation changes the optimal choice of FinFET SRAM cell surface orientations in term of μRSNM/σRSNM.

Original language	English
Title of host publication	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Pages	269-272
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2010.5604510
State	Published - 6 Dec 2010
Event	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy Duration: 6 Sep 2010 → 8 Sep 2010

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Country	Italy
City	Bologna
Period	6/09/10 → 8/09/10

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10.1109/SISPAD.2010.5604510

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Hu, V. P. H., Fan, M. L., Hsieh, C. Y., Su, P., & Chuang, C. T. (2010). FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 (pp. 269-272). [5604510] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2010.5604510

Hu, Vita Pi Ho ; Fan, Ming Long ; Hsieh, Chien Yu ; Su, Pin ; Chuang, Ching Te. / FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation. 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. 2010. pp. 269-272 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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title = "FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation",

abstract = "This paper analyzes the impact of intrinsic process variation and NBTI/PBTI induced time-dependent variations on the stability/variability of 6T FinFET SRAM cells with various surface orientations. Due to quantum confinement, (110)- oriented pull-down devices with fin Line Edge Roughness (LER) show larger Vread,0 and Vtrip variations, thus degrading RSNM and its variability. (100)-oriented pull-up devices with fin LER show larger Vwrite,0 and Vtrip variations, hence degrade the variability of WSNM. The combined effects of intrinsic process variation and NBTI/PBTI induced variations have been examined to optimize the FinFET SRAM cells. Pull-up devices with (110) orientation suffer larger NBTI, resulting in large Vtrip variation and significant degradation of RSNM. Our study indicates that consideration of NBTI/PBTI induced temporal variation changes the optimal choice of FinFET SRAM cell surface orientations in term of μRSNM/σRSNM.",

author = "Hu, {Vita Pi Ho} and Fan, {Ming Long} and Hsieh, {Chien Yu} and Pin Su and Chuang, {Ching Te}",

year = "2010",

month = dec,

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doi = "10.1109/SISPAD.2010.5604510",

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Hu, VPH, Fan, ML, Hsieh, CY, Su, P & Chuang, CT 2010, FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation. in 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010., 5604510, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 269-272, 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010, Bologna, Italy, 6/09/10. https://doi.org/10.1109/SISPAD.2010.5604510

FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation. / Hu, Vita Pi Ho; Fan, Ming Long; Hsieh, Chien Yu; Su, Pin; Chuang, Ching Te.

15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. 2010. p. 269-272 5604510 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hu, Vita Pi Ho

AU - Fan, Ming Long

AU - Hsieh, Chien Yu

AU - Su, Pin

AU - Chuang, Ching Te

PY - 2010/12/6

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N2 - This paper analyzes the impact of intrinsic process variation and NBTI/PBTI induced time-dependent variations on the stability/variability of 6T FinFET SRAM cells with various surface orientations. Due to quantum confinement, (110)- oriented pull-down devices with fin Line Edge Roughness (LER) show larger Vread,0 and Vtrip variations, thus degrading RSNM and its variability. (100)-oriented pull-up devices with fin LER show larger Vwrite,0 and Vtrip variations, hence degrade the variability of WSNM. The combined effects of intrinsic process variation and NBTI/PBTI induced variations have been examined to optimize the FinFET SRAM cells. Pull-up devices with (110) orientation suffer larger NBTI, resulting in large Vtrip variation and significant degradation of RSNM. Our study indicates that consideration of NBTI/PBTI induced temporal variation changes the optimal choice of FinFET SRAM cell surface orientations in term of μRSNM/σRSNM.

AB - This paper analyzes the impact of intrinsic process variation and NBTI/PBTI induced time-dependent variations on the stability/variability of 6T FinFET SRAM cells with various surface orientations. Due to quantum confinement, (110)- oriented pull-down devices with fin Line Edge Roughness (LER) show larger Vread,0 and Vtrip variations, thus degrading RSNM and its variability. (100)-oriented pull-up devices with fin LER show larger Vwrite,0 and Vtrip variations, hence degrade the variability of WSNM. The combined effects of intrinsic process variation and NBTI/PBTI induced variations have been examined to optimize the FinFET SRAM cells. Pull-up devices with (110) orientation suffer larger NBTI, resulting in large Vtrip variation and significant degradation of RSNM. Our study indicates that consideration of NBTI/PBTI induced temporal variation changes the optimal choice of FinFET SRAM cell surface orientations in term of μRSNM/σRSNM.

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Hu VPH, Fan ML, Hsieh CY, Su P, Chuang CT. FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation. In 15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010. 2010. p. 269-272. 5604510. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2010.5604510