FinFET SRAM cell optimization considering temporal variability due to NBTI/PBTI and surface orientation

Vita Pi Ho Hu, Ming Long Fan, Chien Yu Hsieh, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper analyzes the impact of intrinsic process variation and NBTI/PBTI induced time-dependent variations on the stability/variability of 6T FinFET SRAM cells with various surface orientations. Due to quantum confinement, (110)- oriented pull-down devices with fin Line Edge Roughness (LER) show larger Vread,0 and Vtrip variations, thus degrading RSNM and its variability. (100)-oriented pull-up devices with fin LER show larger Vwrite,0 and Vtrip variations, hence degrade the variability of WSNM. The combined effects of intrinsic process variation and NBTI/PBTI induced variations have been examined to optimize the FinFET SRAM cells. Pull-up devices with (110) orientation suffer larger NBTI, resulting in large Vtrip variation and significant degradation of RSNM. Our study indicates that consideration of NBTI/PBTI induced temporal variation changes the optimal choice of FinFET SRAM cell surface orientations in term of μRSNM/σRSNM.

Original languageEnglish
Title of host publication15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
Pages269-272
Number of pages4
DOIs
StatePublished - 6 Dec 2010
Event15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010 - Bologna, Italy
Duration: 6 Sep 20108 Sep 2010

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference15th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2010
CountryItaly
CityBologna
Period6/09/108/09/10

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