FinFET and UTB-How to make very short channel mosfets

Chen-Ming Hu

doi:10.1149/05009.0017ecst

FinFET and UTB-How to make very short channel mosfets

Chen-Ming Hu^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

New materials with enhanced mobility are clearly going to be important to the IC industry. In addition, the leakage current in future short gate transistors must be suppressed somehow. FinFET was developed for this goal. Its fin shape or its 3D nature is not the reason for its ability to suppress the leakage current. A 2D planar short gate structure, Ultra-Thin-Body (UTB), was proposed and demonstrated at the same time as FinFET. Together they illustrate a new scaling principle. Future monolayer semiconductor transistors are naturally UTB and highly scalable.

Original language	English
Title of host publication	SiGe, Ge, and Related Compounds 5
Subtitle of host publication	Materials, Processing, and Devices
Pages	17-20
Number of pages	4
Edition	9
DOIs	https://doi.org/10.1149/05009.0017ecst
State	Published - 1 Dec 2012
Event	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States Duration: 7 Oct 2012 → 12 Oct 2012

Publication series

Name	ECS Transactions
Number	9
Volume	50
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
Country	United States
City	Honolulu, HI
Period	7/10/12 → 12/10/12

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abstract = "New materials with enhanced mobility are clearly going to be important to the IC industry. In addition, the leakage current in future short gate transistors must be suppressed somehow. FinFET was developed for this goal. Its fin shape or its 3D nature is not the reason for its ability to suppress the leakage current. A 2D planar short gate structure, Ultra-Thin-Body (UTB), was proposed and demonstrated at the same time as FinFET. Together they illustrate a new scaling principle. Future monolayer semiconductor transistors are naturally UTB and highly scalable.",

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Hu, C-M 2012, FinFET and UTB-How to make very short channel mosfets. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, pp. 17-20, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 7/10/12. https://doi.org/10.1149/05009.0017ecst

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AB - New materials with enhanced mobility are clearly going to be important to the IC industry. In addition, the leakage current in future short gate transistors must be suppressed somehow. FinFET was developed for this goal. Its fin shape or its 3D nature is not the reason for its ability to suppress the leakage current. A 2D planar short gate structure, Ultra-Thin-Body (UTB), was proposed and demonstrated at the same time as FinFET. Together they illustrate a new scaling principle. Future monolayer semiconductor transistors are naturally UTB and highly scalable.

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FinFET and UTB-How to make very short channel mosfets

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