FinFET and UTB-How to make very short channel mosfets

Chen-Ming Hu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

New materials with enhanced mobility are clearly going to be important to the IC industry. In addition, the leakage current in future short gate transistors must be suppressed somehow. FinFET was developed for this goal. Its fin shape or its 3D nature is not the reason for its ability to suppress the leakage current. A 2D planar short gate structure, Ultra-Thin-Body (UTB), was proposed and demonstrated at the same time as FinFET. Together they illustrate a new scaling principle. Future monolayer semiconductor transistors are naturally UTB and highly scalable.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages17-20
Number of pages4
Edition9
DOIs
StatePublished - 1 Dec 2012
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: 7 Oct 201212 Oct 2012

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period7/10/1212/10/12

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