A quasi-planar double-gate MOSFET, FinFET, was described. It is a device in which a thin, fin-shaped body is straddled by the gate, forming self-aligned channels that run along the sides of the fin. The FinFET is developed with special emphasis on process simplicity and compatibility with conventional planar CMOS technology. The FinFET width can be increased easily by drawing multiple fins in parallel.
|Journal||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|State||Published - 1 Jan 2001|
|Event||Digest of Technical Papers - IEEE International Solid-State Circuits Conference - |
Duration: 5 Feb 2001 → 6 Feb 2001