FinFET - A quasi-planar double-gate MOSFET

S. H. Tang*, L. Chang, N. Lindert, Y. K. Choi, W. C. Lee, X. Huang, V. Subramanian, J. Bokor, T. J. King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

98 Scopus citations

Abstract

A quasi-planar double-gate MOSFET, FinFET, was described. It is a device in which a thin, fin-shaped body is straddled by the gate, forming self-aligned channels that run along the sides of the fin. The FinFET is developed with special emphasis on process simplicity and compatibility with conventional planar CMOS technology. The FinFET width can be increased easily by drawing multiple fins in parallel.

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