Fine-Feature Cu/In Interconnect Bonding Using Single Sided Heating and Chip-to-Wafer Bonding Technology

Shih Wei Lee, Ching Yun Chang, Geng Ming Chang, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A submicron-thick Cu/In bonding by using single sided heating approach has been successfully demonstrated on chip-to-wafer-level without antioxidant metal coating. The single sided heating approach can successfully prevent oxidation of Cu metal on the wafer during bonding. As compared with double sided heating method, a lower specific contact resistance can be obtained in single sided heating method. In addition, post-bonding annealing can further improve the bonding quality. Excellent electrical performances of reliability tests show a great potential for future highly dense interconnect.

Original languageEnglish
Article number7797449
Pages (from-to)128-131
Number of pages4
JournalIEEE Journal of the Electron Devices Society
Volume5
Issue number2
DOIs
StatePublished - 1 Mar 2017

Keywords

  • Three-dimensional integration
  • chip to wafer bonding
  • single sided heating approach

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