Film thickness dependence of structural and dielectric properties of Pb(Mg1/3Nb2/3)O3/BaTiO3/Pt/Ti/SiO 2/Si

Chun-Hua Chen*, Naoki Wakiya, Kazuo Shinozaki, Nobuyasu Mizutani

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


Perovskite type lead magnesium niobate Pb(Mg1/3Nb2/3)O3 (PMN) films with BaTiO3 (BT) buffer layers on Pt/Ti/SiO2/Si substrates were prepared by pulsed laser deposition (PLD). Effects of PMN thicknesses on the film structural and dielectric properties were investigated mainly by the high-resolution X-ray diffraction. The grazing X-ray diffraction with various incident angles was used for the analysis of film-depth effects upon the lattice constant and orientation. The thickness dependencies of lattice constant, orientation and dielectric constant of PMN are caused by the thermal residual stress due to the large difference in thermal expansion coefficient between the PMN and bottom layers.

Original languageEnglish
Pages (from-to)87-91
Number of pages5
JournalKey Engineering Materials
StatePublished - 2 Dec 2002
EventAsian Ceramic Science for Electronics II Proceedings of the 2nd Asian Meeting of Electroceramics - Kawasaki, Japan
Duration: 1 Oct 20011 Oct 2001


  • Grazing X-Ray Diffraction
  • PLD
  • Thermal Expansion

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