The modification of the electron beam resist by spiking with various amounts of poly(styrene-co-maleic anhydride) copolymer is performed. The characterization of resist solutions by gel permeation chromatography (GPC) and viscosity measurement reveals the main polymer chain in the resist is unchangeable, irrespective of the amount of modification. In addition, the spiking copolymer exists in original form. The viscosity of the resist increases with the amount of spiking polymer. Our thermal analysis results show that the resists are mainly decomposed in two regions (280 and 544 °C). The mass loss at 280 °C is significant higher than at 544 °C. The spectra of Fourier transform infrared red (FTIR) spectrometer indicate the extent of carbonate group decomposition decreases with temperature for resists. The plasma etching experiment indicates the promotion of etching resistance of the resist film is due to modification, while the resolution, sensitivity and contrast are not degraded. Owing to the polymer aggregation effect, the stripping performance of the resist film can achieve better after copolymer modification.
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 1 Jan 2000|
|Event||Advances in Resist Technology and Processing XVII - Santa Clara, CA, USA|
Duration: 28 Feb 2000 → 1 Mar 2000