Field enhanced oxide charge detrapping in n-MOSFET's

Ta-Hui Wang*, Tse En Chang, Lu Ping Chiang, Chimoon Huang

*Corresponding author for this work

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The field dependence of oxide charge detrapping time in a 0.6 μm DDD n-MOSFET subject to hot carrier stress was characterized. A series of oxide trap charging and discharging conditions were performed using GIDL current as a direct monitor of the transient characteristics of oxide charge detrapping. An analytical model accounting for the GIDL current transient was developed. The measured result shows that the detrapping time is a strong decreasing function of an oxide field, which suggests that the charge detrapping process is mainly via field enhanced tunneling. A quantitative agreement between the measured and the calculated trap time constants was obtained.

Original languageEnglish
Pages (from-to)122-125
Number of pages4
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 1996
EventProceedings of the 1996 34th Annual IEEE International Reliability Physics - Dallas, TX, USA
Duration: 30 Apr 19962 May 1996

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