Field-effect transistors built from all two-dimensional material components

Tania Roy, Mahmut Tosun, Jeong Seuk Kang, Angada B. Sachid, Sujay B. Desai, Mark Hettick, Chen-Ming Hu, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

438 Scopus citations


We demonstrate field-effect transistors using heterogeneously stacked two-dimensional materials for all of the components, including the semiconductor, insulator, and metal layers. Specifically, MoS2 is used as the active channel material, hexagonal-BN as the top-gate dielectric, and graphene as the source/drain and the top-gate contacts. This transistor exhibits n-type behavior with an ON/OFF current ratio of >106, and an electron mobility of ∼33 cm2/V·s. Uniquely, the mobility does not degrade at high gate voltages, presenting an important advantage over conventional Si transistors where enhanced surface roughness scattering severely reduces carrier mobilities at high gate-fields. A WSe 2-MoS2 diode with graphene contacts is also demonstrated. The diode exhibits excellent rectification behavior and a low reverse bias current, suggesting high quality interfaces between the stacked layers. In this work, all interfaces are based on van der Waals bonding, presenting a unique device architecture where crystalline, layered materials with atomically uniform thicknesses are stacked on demand, without the lattice parameter constraints. The results demonstrate the promise of using an all-layered material system for future electronic applications.

Original languageEnglish
Pages (from-to)6259-6264
Number of pages6
JournalACS Nano
Issue number6
StatePublished - 24 Jun 2014


  • graphene
  • heterolayers
  • hexagonal boron nitride
  • layered materials
  • transition metal dichalcogenides

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