Field-effect-dependent thermoelectric power in highly resistive Sb2Se3 single nanowire

Kien-Wen Sun*, Ting Yu Ko, Muthaiah Shellaiah

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this paper, we report the results of our experiments on and measurements of electrical resistivity and thermoelectric power (Seebeck coefficient) from single-crystalline antimony triselenide (Sb2Se3) single nanowires (NWs) with high resistivity (σ ~ 4.37 × 10−4 S/m). A positive Seebeck coefficient of approximately 661 µV/K at room temperature was obtained using a custom-made thermoelectric power probe with an alternating current lock-in method (the 2ω technique), which indicates that the thermal transport is dominated by holes. The measured Seebeck coefficient of the NWs is a factor of 2–3 lower than their bulk counterparts and is comparable to that of a highly conductive Sb2Se3 single NWs (approximately − 750 µV/K). We observed an increase in the Seebeck coefficients with increased bias voltages by field-effect gating, which cannot be explained by the modulation of the Fermi level in the NWs.

Original languageEnglish
Article number317
JournalApplied Physics A: Materials Science and Processing
Volume124
Issue number4
DOIs
StatePublished - 1 Apr 2018

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