Field dependence of two large hole capture cross sections in thermal oxide on silicon

Joseph Jengtao Tzou*, Jack Yuan Chen Sun, Chih Tang Sah

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

The oxide field dependence of the hole capture cross sections of two oxide hole traps is reported. The capture cross section varies with the average oxide field as E-nox with n≅0.6 for the 10- 13 cm2 hole trap and n≅0.4 for the 10 -14 cm2 hole trap. The observed field dependences can be explained by the potential lowering of a highly localized neutral potential, V(r)=A/rm, with m=4 for the 10 -13 cm2 hole trap and m=6.5 for the 10-14 cm2 hole trap.

Original languageEnglish
Pages (from-to)861-863
Number of pages3
JournalApplied Physics Letters
Volume43
Issue number9
DOIs
StatePublished - 1983

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