We investigate the electric field dependence of the breakdown of porous low-kdielectrics by measuring the changes in the failure time distribution resulting from the presence of line edge roughness. We show that the Weibull increases with decreasing field, clearly demonstrating that dielectric breakdown does not exhibit 1/E or E-n characteristics.
|Number of pages||3|
|Journal||IEEE Transactions on Device and Materials Reliability|
|State||Published - 1 Mar 2011|
- Cu/low-κ interconnect reliability
- line edge roughness (LER)
- time-dependent dielectric breakdown (TDDB).