Field Dependence of Porous Low-κ dielectric breakdown as revealed by the effects of line edge roughness on failure distributions

S. C. Lee, A. S. Oates, Kow-Ming Chang

Research output: Contribution to journalArticlepeer-review

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Abstract

We investigate the electric field dependence of the breakdown of porous low-kdielectrics by measuring the changes in the failure time distribution resulting from the presence of line edge roughness. We show that the Weibull increases with decreasing field, clearly demonstrating that dielectric breakdown does not exhibit 1/E or E-n characteristics.

Original languageEnglish
Article number5678634
Pages (from-to)201-203
Number of pages3
JournalIEEE Transactions on Device and Materials Reliability
Volume11
Issue number1
DOIs
StatePublished - 1 Mar 2011

Keywords

  • Cu/low-κ interconnect reliability
  • line edge roughness (LER)
  • time-dependent dielectric breakdown (TDDB).

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