Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown for Reoxidized-Nitrided and Fluorinated Oxides

Z. H. Liu; P. Nee; Ping K. Ko; Chen-Ming Hu; Charles G. Sodini; B. J. Gross; Tso Ping Ma; Yiu Chung Cheng

doi:10.1109/55.144945

Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown for Reoxidized-Nitrided and Fluorinated Oxides

Z. H. Liu, P. Nee, Ping K. Ko, Chen-Ming Hu, Charles G. Sodini, B. J. Gross, Tso Ping Ma, Yiu Chung Cheng

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The effects of injection current density and temperature on time-dependent dielectric breakdown (TDDB) of low-pressure thermally reoxidized-nitrided oxides (RNO's) and fluorinated oxides (FO's) with equivalent oxide thicknesses of 100 A were examined. Time to breakdown for RNO was found to be improved over that for thermal oxide while both the impact ionization coefficient and the activation energy of lifetime are comparable to those of control oxide. On the other hand, no obvious TDDB improvement was observed for FO. This observation, in conjunction with the results for charge trapping measurements at different temperatures, indicates that the lifetime improvement for RNO's might be due to the reduced charge traps in these films. I-V ramp tests have shown that RNO has a comparable defect density to that of control oxide.

Original language	English
Pages (from-to)	41-43
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	13
Issue number	1
DOIs	https://doi.org/10.1109/55.144945
State	Published - 1 Jan 1992

Access to Document

10.1109/55.144945

Fingerprint Dive into the research topics of 'Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown for Reoxidized-Nitrided and Fluorinated Oxides'. Together they form a unique fingerprint.

Cite this

@article{f247e259c024442aa28faf7a77225ad3,

title = "Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown for Reoxidized-Nitrided and Fluorinated Oxides",

abstract = "The effects of injection current density and temperature on time-dependent dielectric breakdown (TDDB) of low-pressure thermally reoxidized-nitrided oxides (RNO's) and fluorinated oxides (FO's) with equivalent oxide thicknesses of 100 A were examined. Time to breakdown for RNO was found to be improved over that for thermal oxide while both the impact ionization coefficient and the activation energy of lifetime are comparable to those of control oxide. On the other hand, no obvious TDDB improvement was observed for FO. This observation, in conjunction with the results for charge trapping measurements at different temperatures, indicates that the lifetime improvement for RNO's might be due to the reduced charge traps in these films. I-V ramp tests have shown that RNO has a comparable defect density to that of control oxide.",

author = "Liu, {Z. H.} and P. Nee and Ko, {Ping K.} and Chen-Ming Hu and Sodini, {Charles G.} and Gross, {B. J.} and Ma, {Tso Ping} and Cheng, {Yiu Chung}",

year = "1992",

month = jan,

day = "1",

doi = "10.1109/55.144945",

language = "English",

volume = "13",

pages = "41--43",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown for Reoxidized-Nitrided and Fluorinated Oxides. / Liu, Z. H.; Nee, P.; Ko, Ping K.; Hu, Chen-Ming; Sodini, Charles G.; Gross, B. J.; Ma, Tso Ping; Cheng, Yiu Chung.

In: IEEE Electron Device Letters, Vol. 13, No. 1, 01.01.1992, p. 41-43.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown for Reoxidized-Nitrided and Fluorinated Oxides

AU - Liu, Z. H.

AU - Nee, P.

AU - Ko, Ping K.

AU - Hu, Chen-Ming

AU - Sodini, Charles G.

AU - Gross, B. J.

AU - Ma, Tso Ping

AU - Cheng, Yiu Chung

PY - 1992/1/1

Y1 - 1992/1/1

N2 - The effects of injection current density and temperature on time-dependent dielectric breakdown (TDDB) of low-pressure thermally reoxidized-nitrided oxides (RNO's) and fluorinated oxides (FO's) with equivalent oxide thicknesses of 100 A were examined. Time to breakdown for RNO was found to be improved over that for thermal oxide while both the impact ionization coefficient and the activation energy of lifetime are comparable to those of control oxide. On the other hand, no obvious TDDB improvement was observed for FO. This observation, in conjunction with the results for charge trapping measurements at different temperatures, indicates that the lifetime improvement for RNO's might be due to the reduced charge traps in these films. I-V ramp tests have shown that RNO has a comparable defect density to that of control oxide.

AB - The effects of injection current density and temperature on time-dependent dielectric breakdown (TDDB) of low-pressure thermally reoxidized-nitrided oxides (RNO's) and fluorinated oxides (FO's) with equivalent oxide thicknesses of 100 A were examined. Time to breakdown for RNO was found to be improved over that for thermal oxide while both the impact ionization coefficient and the activation energy of lifetime are comparable to those of control oxide. On the other hand, no obvious TDDB improvement was observed for FO. This observation, in conjunction with the results for charge trapping measurements at different temperatures, indicates that the lifetime improvement for RNO's might be due to the reduced charge traps in these films. I-V ramp tests have shown that RNO has a comparable defect density to that of control oxide.

UR - http://www.scopus.com/inward/record.url?scp=0026626370&partnerID=8YFLogxK

U2 - 10.1109/55.144945

DO - 10.1109/55.144945

M3 - Article

AN - SCOPUS:0026626370

VL - 13

SP - 41

EP - 43

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -

Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown for Reoxidized-Nitrided and Fluorinated Oxides

Abstract

Access to Document

Other files and links

Cite this