Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments

Dung Sheng Tsai, Keng Ku Liu, Der Hsien Lien, Meng Lin Tsai, Chen Fang Kang, Chin An Lin, Lain Jong Li, Jr Hau He*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

435 Scopus citations

Abstract

Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ∼1010 cm Hz1/2/W), fast photoresponse (rise time of ∼70 μs and fall time of ∼110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (∼10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.

Original languageEnglish
Pages (from-to)3905-3911
Number of pages7
JournalACS Nano
Volume7
Issue number5
DOIs
StatePublished - 28 May 2013

Keywords

  • graphene
  • harsh environment
  • high-temperature detection
  • MoS
  • photodetector

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