Ferroelectricity in HfO2 thin films as a function of Zr doping

Golnaz Karbasian, Ava Tan, Ajay Yadav, Eric Martin Henry Sorensen, Claudy Rayan Serrao, Asif Islam Khan, Korok Chatterjee, Sangwan Kim, Chen-Ming Hu, Sayeef Salahuddin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We have studied the effect of Zr doping, from 0% to 100%, on the ferroelectric properties of HfO2. Amorphous HfxZr1-xO2 on TiN and Si substrates is deposited using atomic layer deposition (ALD) and then annealed in a rapid thermal processing (RTP) tool while capped by 20 nm of sputtered TiN. Based on our experiments, Zr doping of up to 50% results in ferroelectricity in polycrystalline HfxZr1-xO2, whereas Zr doping of 70% and above shows antiferroelectricity. Our results show how the properties of ferroelectric HfO2 can be engineered through changing doping and annealing conditions, thereby demonstrating the flexibility of ferroelectric HfO2 for integration in future memory and logic devices.

Original languageEnglish
Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509058051
DOIs
StatePublished - 7 Jun 2017
Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
Duration: 24 Apr 201727 Apr 2017

Publication series

Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Conference

Conference2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
CountryTaiwan
CityHsinchu
Period24/04/1727/04/17

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    Karbasian, G., Tan, A., Yadav, A., Sorensen, E. M. H., Serrao, C. R., Khan, A. I., Chatterjee, K., Kim, S., Hu, C-M., & Salahuddin, S. (2017). Ferroelectricity in HfO2 thin films as a function of Zr doping. In 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 [7942488] (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942488