Ferroelectric thin films in integrated microelectronic devices

J. F. Scot, C. A.Paz De Araujo, T. Mihara, Daisuke Ueda, G. Kano

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We present results on four integrated ferroelectric projects: 1) An integrated barium strontium titanate thin-film on GaAs MMIC (monolithic microwave integrated circuit) with dielectric constant of 450 and loss tangent of 10'3 at 2.2 GHz operation, done as a Symetrix/Matsushita Electronics Corp. joint development; 2) A low-density (1 Kb) ferroelectric RAM (random access memory) done with PZT (lead zirconate titanate) and other ferroelectrics on CMOS (complementary metal oxide semiconductor) Si, carried out as a joint development with Olympus Optical Co.; 3) A liquid-source CVD (chemical vapor deposition) machine and its deposition of strontium titanate and barium strontium titanate films of exceptionally low d.c. leakage current (1 nA/cm at 120 nm thickness and 3V operation) for DRAM (dynamic RAM) applications; and 4) performance parameters of a proprietary material for RAM application which is totally fatigue-free up to at least 5 × 10H cycles.

Original languageEnglish
Pages (from-to)47-60
Number of pages14
JournalFerroelectrics
Volume133
Issue number1
DOIs
StatePublished - 1 Aug 1992

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