Ferroelectric properties of PbxSr1-xTiO3 and its compositionally graded thin films grown on the highly oriented LaNiO3 buffered Pt/Ti/SiO2/Si substrates

Jiwei Zhai*, Xi Yao, Zhengkui Xu, Haydn Chen

*Corresponding author for this work

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Thin films of ferroelectric PbxSr1-xTiO3 (PST) with x=0.3-0.7 and graded composition were fabricated on LaNiO3 buffered Pt/Ti/SiO2/Si substrates by a sol-gel deposition method. The thin films crystallized into a single perovskite structure and exhibited highly (100) preferred orientation after postdeposition annealing at 650°C. The grain size of PST thin films systematically decreased with the increase of Sr content. Dielectric and ferroelectric properties were investigated as a function of temperature, frequency, and dc applied field. Pb 0.6Sr0.4TiO3 films showed a dominant voltage dependence of dielectric constant with a high tunability in a temperature range of 25-230°C. The compositionally graded PST thin films with x=0.3-0.6 also showed the high tunability. The graded thin films exhibited a diffused phase transition accompanied by a diffused peak in the temperature variations of dielectric constants. This kind of thin films has a potential in a fabrication of a temperature stable tunable device.

Original languageEnglish
Article number034108
JournalJournal of Applied Physics
Issue number3
StatePublished - 23 Aug 2006

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