Ferroelectric properties and microstructure of SBT thin films with modified Ta compositions

Fan Yi Hsu*, Chen Ti Hu, Ching Chich Leu, Chao-Hsin Chien

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of Ta content on the ferroelectric properties of SrBi 2 Ta 1.8 O 9 (SBT) thin films which had been synthesized with MOD and spin coating techniques was investigated in present study. It is found that the electrical properties and microstructures of SBT are greatly affected by the Ta content. Polarization measurements revealed that the Ta-deficiency in SBT led to a relatively low coercive field (2E c ∼ 108 kV/cm) and a high remanent polarization (2P r ∼ 18.4μC/cm 2 ). Once increases the Ta ratio, the 2P r .value decreasing. The Ta-rich SrBi 2 Ta 2.2 O 9 thin films exhibit the poor crystallinity and the poor ferroelectric properties. The improvement of ferroelectric properties in Ta-deficient SBT specimens could be attributed to the uniformly large grain structure and the highly (220) preferential orientation. It is believed that the incorporation of the Ta vacancies during synthesizing process plays an important role in promoting the crystallinity of SiBi 2 Ta 1.8 O 9 films.

Original languageEnglish
Title of host publicationDielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia
Pages151-161
Number of pages11
StatePublished - 1 Dec 2006
EventDielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia - Quebec City, QC, Canada
Duration: 15 May 200520 May 2005

Publication series

NameProceedings - Electrochemical Society
VolumePV 2005-13

Conference

ConferenceDielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia
CountryCanada
CityQuebec City, QC
Period15/05/0520/05/05

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    Hsu, F. Y., Hu, C. T., Leu, C. C., & Chien, C-H. (2006). Ferroelectric properties and microstructure of SBT thin films with modified Ta compositions. In Dielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia (pp. 151-161). (Proceedings - Electrochemical Society; Vol. PV 2005-13).