Femtosecond valley polarization and topological resonances in transition metal dichalcogenides

S. Azar Oliaei Motlagh*, Jhih-Sheng Wu, Vadym Apalkov, Mark Stockman

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We theoretically introduce the fundamentally fastest induction of a significant population and valley polarization in a monolayer of a transition metal dichalcogenide (i.e., MoS2 and WS2). This may be extended to other two-dimensional materials with the same symmetry. This valley polarization can be written and read out by a pulse consisting of just a single optical oscillation with a duration of a few femtoseconds and an amplitude of similar to 0.25 V/angstrom. Under these conditions, we predict an effect of topological resonance, which is due to the Bloch motion of electrons in the reciprocal space where electron population textures are formed due to non-Abelian Berry curvature. The predicted phenomena can be applied for information storage and processing in PHz-band optoelectronics.

Original languageEnglish
Article number081406
Number of pages6
JournalPhysical Review B
Volume98
Issue number8
DOIs
StatePublished - 15 Aug 2018

Keywords

  • GENERATION
  • MOS2
  • DYNAMICS
  • GRAPHENE

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