Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

Alvaro Padilla; Chun Wing Yeung; Changhwan Shin; Chen-Ming Hu; Tsu Jae King Liu

doi:10.1109/IEDM.2008.4796643

Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

Alvaro Padilla^*, Chun Wing Yeung, Changhwan Shin, Chen-Ming Hu, Tsu Jae King Liu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

65 Scopus citations

Abstract

A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (∼2 mV/dec) and high I _ON/I _OFF ratio (∼10 ⁸) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low- power electronic devices.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796643
State	Published - 1 Dec 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 15 Dec 2008 → 17 Dec 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country	United States
City	San Francisco, CA
Period	15/12/08 → 17/12/08

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10.1109/IEDM.2008.4796643

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@inproceedings{0b67c4b7e47e4967893bb4151ad82540,

title = "Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages",

abstract = "A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (∼2 mV/dec) and high I ON/I OFF ratio (∼10 8) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low- power electronic devices.",

author = "Alvaro Padilla and Yeung, {Chun Wing} and Changhwan Shin and Chen-Ming Hu and Liu, {Tsu Jae King}",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/IEDM.2008.4796643",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "null ; Conference date: 15-12-2008 Through 17-12-2008",

}

Padilla, A, Yeung, CW, Shin, C, Hu, C-M & Liu, TJK 2008, Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796643, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 15/12/08. https://doi.org/10.1109/IEDM.2008.4796643

Feedback FET : A novel transistor exhibiting steep switching behavior at low bias voltages. / Padilla, Alvaro; Yeung, Chun Wing; Shin, Changhwan; Hu, Chen-Ming; Liu, Tsu Jae King.

2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796643 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Feedback FET

AU - Padilla, Alvaro

AU - Yeung, Chun Wing

AU - Shin, Changhwan

AU - Hu, Chen-Ming

AU - Liu, Tsu Jae King

PY - 2008/12/1

Y1 - 2008/12/1

N2 - A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (∼2 mV/dec) and high I ON/I OFF ratio (∼10 8) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low- power electronic devices.

AB - A novel transistor design which utilizes positive feedback to achieve steep switching behavior is proposed and demonstrated. The feedback (FB) FET exhibits very low subthreshold swing (∼2 mV/dec) and high I ON/I OFF ratio (∼10 8) to allow for significant reductions in gate voltage swing (to below 0.5V). It is a new candidate to replace the MOSFET for future low- power electronic devices.

UR - http://www.scopus.com/inward/record.url?scp=78650760310&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2008.4796643

DO - 10.1109/IEDM.2008.4796643

M3 - Conference contribution

AN - SCOPUS:78650760310

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Feedback FET: A novel transistor exhibiting steep switching behavior at low bias voltages

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