Fault models and test methods for subthreshold SRAMs

Chen Wei Lin*, Hung Hsin Chen, Hao Yu Yang, Chia-Tso Chao, Rei Fu Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations


Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold-SRAM design. However, the test methods regarding those newly developed subthreshold-SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold-SRAM designs into three types, study the faulty behavior of different open defects for each type of designs, and then identify the faults which may or may not be covered by a traditional SRAM test method. For those hard-to-detect faults, we will further discuss the corresponding test method according to different each type of subthreshold-SRAM designs. At last, a discussion about the temperature at test will also be provided.

Original languageEnglish
Title of host publicationProceedings - International Test Conference 2010, ITC 2010
StatePublished - 1 Dec 2010
Event41st International Test Conference, ITC 2010 - Austin, TX, United States
Duration: 31 Oct 20105 Nov 2010

Publication series

NameProceedings - International Test Conference
ISSN (Print)1089-3539


Conference41st International Test Conference, ITC 2010
CountryUnited States
CityAustin, TX

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