Fault models and test methods for subthreshold SRAMs

Chen Wei Lin*, Hung Hsin Chen, Hao Yu Yang, Chin Yuan Huang, Chia-Tso Chao, Rei Fu Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Due to the increasing demand of an extra-low-power system, a great amount of research effort has been spent in the past to develop an effective and economic subthreshold SRAM design. However, the test methods regarding those newly developed subthreshold SRAM designs have not yet been fully discussed. In this paper, we first categorize the subthreshold SRAM designs into three types, study the faulty behavior of open defects and address decoders faults on each type of designs, and then identify the faults which may not be covered by a traditional SRAM test method. We will also discuss the impact of open defects and threshold-voltage mismatch on sense amplifiers under subthreshold operations. A discussion about the temperature at test is also provided.

Original languageEnglish
Article number6425383
Pages (from-to)468-481
Number of pages14
JournalIEEE Transactions on Computers
Issue number3
StatePublished - 11 Feb 2013


  • open defect
  • SRAM
  • stability fault
  • sub-V-{th}
  • subthreshold
  • testing

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