Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

Pang Shiuan Liu, Chang Hsiao Chen, Wei Ting Hsu, Chih Pin Lin, Tzu Ping Lin, Li Jen Chi, Chao Yuan Chang, Shih Chieh Wu, Wen-Hao Chang, Lain Jong Li, Tuo-Hung Hou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.

Original languageEnglish
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages5.7.1-5.7.4
Number of pages4
Volume2015-February
EditionFebruary
ISBN (Electronic)9781479980017
DOIs
StatePublished - 15 Dec 2014
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 15 Dec 201417 Dec 2014

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISSN (Print)0163-1918

Conference

Conference2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period15/12/1417/12/14

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