Fast switching gigabit/s CMOS burst-mode transmitter for PON applications

Day Uei Li*, Chia-Ming Tsai, Li Ren Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

A burst-mode transmitter with automatic power control which is capable of waveform shaping, fast laser on/off switching, and driving over 60mA modulation current is presented in this paper. It is constructed by a driver which was fabricated in 0.25um 1P5M CMOS process with a 2.5-Gh/s 1310nm-wavelenglh Fabry-Perot laser diode. Measurements show clear eye diagrams operating over 2.5-Gb/s data rate with 84/97ps rise/fall times. The turn on/off delay of modulation current is less than 6ns. And the laser turn on/off time is about 30/20ns which is applicable for EPON or even GPON applications.

Original languageEnglish
Title of host publication2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
Pages257-260
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT) - Hsinchu, Taiwan
Duration: 27 Apr 200529 Apr 2005

Publication series

Name2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
Volume2005

Conference

Conference2005 IEEE VLSI-TSA International Symposium on VLSI Design, Automation and Test,(VLSI-TSA-DAT)
CountryTaiwan
CityHsinchu
Period27/04/0529/04/05

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