Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

Yu Chung Lien, Jia Min Shieh*, Wen Hsien Huang, Cheng Hui Tu, Chieh Wang, Chang Hong Shen, Bau Tong Dai, Ci Ling Pan, Chen-Ming Hu, Fu Liang Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 μs under low operating voltages of ±7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.

Original languageEnglish
Article number143501
JournalApplied Physics Letters
Volume100
Issue number14
DOIs
StatePublished - 2 Apr 2012

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