Fast-IV measurement investigation of the role of TiN gate nitrogen concentration on bulk traps in HfO2 layer in p-MOSFETs

Ying Hsin Lu, Ting Chang Chang, Jih Chien Liao, Li Hui Chen, Yu Shan Lin, Ching En Chen, Kuan Ju Liu, Xi Wen Liu, Chien Yu Lin, Chen Hsin Lien, Tseung-Yuen Tseng, Osbert Cheng, Cheng Tung Huang, Wei Ting Yen

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This letter investigates the role of the TiN gate's nitrogen concentration on bulk traps in the HfO2 layer in p-MOSFETs using fast I-V measurement. During negative bias temperature instability, the holes trapped in the HfO2 layer will induce Vth degradation. The fast I-V double sweep confirms the holes are trapped in process-related pre-existing defects. These defects are interstitial-type, influenced by the nitrogen in the TiN gate diffusing to the HfO2 layer when the device undergoes thermal annealing. Moreover, these nitrogen interstitials increase with increasing TiN gate nitrogen concentration, which induces more holes being trapped in the HfO2 layer.

Original languageEnglish
Article number7862173
Pages (from-to)475-478
Number of pages4
JournalIEEE Transactions on Device and Materials Reliability
Volume17
Issue number2
DOIs
StatePublished - 1 Jun 2017

Keywords

  • Fast IV sweep
  • Hole trapping
  • Negative bias temperature instability (NBTI)
  • Process-related pre-existing defects

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