Fast high-κ AIN MONOS memory with large memory window and good retention

C. H. Lai*, C. C. Huang, K. C. Chiang, H. L. Kao, W. J. Chen, Albert Chin, C. C. Chi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO 2 -HfAlO-AIN-SiO 2 -Si MONOS device.

Original languageEnglish
Title of host publication63rd Device Research Conference Digest, DRC'05
Pages99-100
Number of pages2
DOIs
StatePublished - 1 Dec 2005
Event63rd Device Research Conference, DRC'05 - Santa Clara, CA, United States
Duration: 20 Jun 200522 Jun 2005

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2005
ISSN (Print)1548-3770

Conference

Conference63rd Device Research Conference, DRC'05
CountryUnited States
CitySanta Clara, CA
Period20/06/0522/06/05

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