Fast high-κ AIN MONOS memory with large memory window and good retention

C. H. Lai; C. C. Huang; K. C. Chiang; H. L. Kao; W. J. Chen; Albert Chin; C. C. Chi

doi:10.1109/DRC.2005.1553074

Fast high-κ AIN MONOS memory with large memory window and good retention

C. H. Lai^*, C. C. Huang, K. C. Chiang, H. L. Kao, W. J. Chen, Albert Chin, C. C. Chi

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO ₂ -HfAlO-AIN-SiO ₂ -Si MONOS device.

Original language	English
Title of host publication	63rd Device Research Conference Digest, DRC'05
Pages	99-100
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2005.1553074
State	Published - 1 Dec 2005
Event	63rd Device Research Conference, DRC'05 - Santa Clara, CA, United States Duration: 20 Jun 2005 → 22 Jun 2005

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2005
ISSN (Print)	1548-3770

Conference

Conference	63rd Device Research Conference, DRC'05
Country	United States
City	Santa Clara, CA
Period	20/06/05 → 22/06/05

Access to Document

10.1109/DRC.2005.1553074

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@inproceedings{a20a40f1436448aea05482fb38791057,

title = "Fast high-κ AIN MONOS memory with large memory window and good retention",

abstract = " We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO 2 -HfAlO-AIN-SiO 2 -Si MONOS device.",

author = "Lai, {C. H.} and Huang, {C. C.} and Chiang, {K. C.} and Kao, {H. L.} and Chen, {W. J.} and Albert Chin and Chi, {C. C.}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/DRC.2005.1553074",

language = "English",

isbn = "0780390407",

series = "Device Research Conference - Conference Digest, DRC",

pages = "99--100",

booktitle = "63rd Device Research Conference Digest, DRC'05",

note = "null ; Conference date: 20-06-2005 Through 22-06-2005",

}

Lai, CH, Huang, CC, Chiang, KC, Kao, HL, Chen, WJ, Chin, A & Chi, CC 2005, Fast high-κ AIN MONOS memory with large memory window and good retention. in 63rd Device Research Conference Digest, DRC'05., 1553074, Device Research Conference - Conference Digest, DRC, vol. 2005, pp. 99-100, 63rd Device Research Conference, DRC'05, Santa Clara, CA, United States, 20/06/05. https://doi.org/10.1109/DRC.2005.1553074

Fast high-κ AIN MONOS memory with large memory window and good retention. / Lai, C. H.; Huang, C. C.; Chiang, K. C.; Kao, H. L.; Chen, W. J.; Chin, Albert; Chi, C. C.

63rd Device Research Conference Digest, DRC'05. 2005. p. 99-100 1553074 (Device Research Conference - Conference Digest, DRC; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fast high-κ AIN MONOS memory with large memory window and good retention

AU - Lai, C. H.

AU - Huang, C. C.

AU - Chiang, K. C.

AU - Kao, H. L.

AU - Chen, W. J.

AU - Chin, Albert

AU - Chi, C. C.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO 2 -HfAlO-AIN-SiO 2 -Si MONOS device.

AB - We have obtained good non-volatile memory device integrity of fast 100μs program and 1ms erase time at ±13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85°C in the new IrO 2 -HfAlO-AIN-SiO 2 -Si MONOS device.

UR - http://www.scopus.com/inward/record.url?scp=33751349495&partnerID=8YFLogxK

U2 - 10.1109/DRC.2005.1553074

DO - 10.1109/DRC.2005.1553074

M3 - Conference contribution

AN - SCOPUS:33751349495

SN - 0780390407

SN - 9780780390409

T3 - Device Research Conference - Conference Digest, DRC

SP - 99

EP - 100

BT - 63rd Device Research Conference Digest, DRC'05

Y2 - 20 June 2005 through 22 June 2005

ER -

Fast high-κ AIN MONOS memory with large memory window and good retention

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