Fast and accurate programming method for multi-level NAND EEPROMs

G. J. Hemink*, T. Tanaka, T. Endoh, S. Aritome, Shirota Riichiro

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

71 Scopus citations

Abstract

For the replacement of conventional harddisks by NAND EEPROMs, a very high density and a high programming speed are required. An increased density can be achieved by using multi-level memory cells. With the new method, using staircase programming pulses combined with a bit-by-bit verify, a very narrow threshold voltage distribution of 0.7V, necessary for 4-level or 2-bit operation, and a high programming speed of 300μs/page or 590ns/byte can be obtained.

Original languageEnglish
Pages (from-to)129-130
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Dec 1995
EventProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 6 Jun 19958 Jun 1995

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