Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals

Chun Feng Lai, Jim Yong Chi*, Hao-Chung Kuo, Hsi Hsuan Yen, Chia En Lee, Chia Hsin Chao, Han Tsung Hsueh, Wen Yung Yeh

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Far-field distributions of GaN-based photonic crystal (PhC) film-transferred light-emitting diodes (FT-LEDs) were investigated. The thickness of the device is about 840 nm. The emission wavelength is around 520 nm. The PhC region is a square lattice with a/λ around 0.5. Angular-resolved measurements in the Γ-X and Γ-M directions were made in the polarized-resolved manner. Guided mode extraction behavior in agreement with the two-dimensional free-photon band calculation was observed. In addition, the pseudo-TM behavior for the non-collinearly coupled modes was observed. The azimuthal-mapping of the angular-resolved spectra revealed the evolution of the collinearly and the non-collinearly coupled modes. Furthermore, the light enhancement of ∼2.7× and the collimation angle about 102.3° were achieved.

Original languageEnglish
Pages (from-to)8795-8804
Number of pages10
JournalOptics Express
Volume17
Issue number11
DOIs
StatePublished - 25 May 2009

Keywords

  • (230.3670) light-emitting diodes
  • (230.5298) photonic crystals

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    Lai, C. F., Chi, J. Y., Kuo, H-C., Yen, H. H., Lee, C. E., Chao, C. H., Hsueh, H. T., & Yeh, W. Y. (2009). Far-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystals. Optics Express, 17(11), 8795-8804. https://doi.org/10.1364/OE.17.008795