Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

S. Stoffels, B. Bakeroot, Tian-Li Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico, C. Fiegna

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

25 Scopus citations

Abstract

In this work we investigate the failure modes of GaN based e-mode transistors with a p-GaN gate, for which the top contact towards the p-GaN is realized with a Schottky metal. First the general performance and stability of the platform will be demonstrated, together with the time dependent dielectric breakdown (TDDB) behavior of the gate. The failure mechanism of the gate has been studied by performing constant voltage stress (CVS) measurements. This has been performed for two different process conditions with varying active Mg concentration. Main results in this paper demonstrate i. Reliable device operation for p-GaN gates with Schottky metal contacts II. TDDB degradation of the gate driven by a percolation path III. The type of percolation path is dependent on the gate processing. Results indicate the formation of a percolation path in the AlGaN barrier, which is demonstrated by experiments and further verified by modelling.

Original languageEnglish
Title of host publication2017 International Reliability Physics Symposium, IRPS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4B4.1-4B4.9
ISBN (Electronic)9781509066407
DOIs
StatePublished - 30 May 2017
Event2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States
Duration: 2 Apr 20176 Apr 2017

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2017 International Reliability Physics Symposium, IRPS 2017
CountryUnited States
CityMonterey
Period2/04/176/04/17

Keywords

  • Gallium nitride
  • Gate leakage
  • Semiconductor device reliability

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