Failure analysis on TiAl metallization process for ohmic contact on 4H-SiC pMOSFET

Chia Lung Hung, Jung Chien Cheng, Bing Yue Tsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

SiC is suitable for high-power and high-temperature applications due to its' wide energy bandgap and high thermal conductivity. Most literature focus on SiC nMOSFET due to higher electron mobility than hole. In this work, we fabricated 4HSiC pMOSFET using TiAl alloy as contact metal to reduce the contact resistivity. However, ultrahigh leakage current was measured among all terminals of the pMOSFET. By comparing with different contact schemes, the failure mechanism is attributed to Al spiking into the underneath poly-Si and SiO2 during the metallization process. Using suitable blocking layer such as LPCVD Si3N4 (300 nm) or PECVD Si3N4 (100 nm) on SiO2 (200 nm) can avoid Al spiking so that conventional pattern topology and TiAl metallization process can be used on device fabrication.

Original languageEnglish
Title of host publication26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728135526
DOIs
StatePublished - Jul 2019
Event26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 - Hangzhou, China
Duration: 2 Jul 20195 Jul 2019

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019
CountryChina
CityHangzhou
Period2/07/195/07/19

Keywords

  • 4H-SiC pMOSFET
  • Al spiking
  • Blocking layer
  • Leakage current
  • Ohmic contact

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  • Cite this

    Hung, C. L., Cheng, J. C., & Tsui, B. Y. (2019). Failure analysis on TiAl metallization process for ohmic contact on 4H-SiC pMOSFET. In 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 [8984917] (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPFA47161.2019.8984917