Factors affecting hysteresis in the transfer curves of a-IGZO TFTs under illumination and raised temperature

Yi Jung Chen, Ya-Hsiang Tai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

For different environments of illumination and temperature, we investigate the hysteresis in the transfer characteristic of a-IGZO TFT by controlling the sweep speed of the gate voltage. The hysteresis can be affected by the response time for the transition of oxygen vacancies states to the ionized states and its amount.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages374-377
Number of pages4
ISBN (Electronic)9781479999286, 9781479999286
DOIs
StatePublished - 25 Aug 2015
Event22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
Duration: 29 Jun 20152 Jul 2015

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2015-August

Conference

Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
CountryTaiwan
CityHsinchu
Period29/06/152/07/15

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