We demonstrated an antireflective coating structure, which is based on a three-layer Fabry-Perot structure, for binary masks of ArF (193 nm) and F2 (157 nm) excimer laser based lithographies. The antireflective coating structure is composed of a metal/dielectric/metal stack. By adding different optimized structures, reflectance of less than 1% at both 193 and 157 nm have been achieved. At the Fabry-Perot structure, the bottom metal layer provides suitable absorption. By controlling the thickness of the intermediate dielectric layer, we can tune the minimum reflection regime to the desired exposure wavelength. The top metal layer can prevent charge accumulation during electron-beam writing.