Fabry-Pérot structures for attenuated phase-shifting mask application in ArF and F 2 lithography

H. L. Chen; H. S. Wu; C. C. Lee; Fu-Hsiang Ko; Wonder Fan; C. I. Hsieh

doi:10.1116/1.1624251

Fabry-Pérot structures for attenuated phase-shifting mask application in ArF and F ₂ lithography

H. L. Chen^*, H. S. Wu, C. C. Lee, Fu-Hsiang Ko, Wonder Fan, C. I. Hsieh

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A structure for an attenuated phase-shifting mask (APSM) based on a three-layer Fabry-Pérot structure in ArF and F ₂ lithography was studied. Reflection and transmission spectra in the deep ultraviolet and vacuum ultraviolet regimes were measured by an optical spectrometer. Various dielectric materials were used in the tungsten films-based APSM structure in F ₂ lithography. The results show that low reflectance and suitable transmittance at 157 nm can be achieved.

Original language	English
Pages (from-to)	3057-3061
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	6
DOIs	https://doi.org/10.1116/1.1624251
State	Published - 1 Nov 2003

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title = "Fabry-P{\'e}rot structures for attenuated phase-shifting mask application in ArF and F 2 lithography",

abstract = " A structure for an attenuated phase-shifting mask (APSM) based on a three-layer Fabry-P{\'e}rot structure in ArF and F 2 lithography was studied. Reflection and transmission spectra in the deep ultraviolet and vacuum ultraviolet regimes were measured by an optical spectrometer. Various dielectric materials were used in the tungsten films-based APSM structure in F 2 lithography. The results show that low reflectance and suitable transmittance at 157 nm can be achieved. ",

author = "Chen, {H. L.} and Wu, {H. S.} and Lee, {C. C.} and Fu-Hsiang Ko and Wonder Fan and Hsieh, {C. I.}",

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language = "English",

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Fabry-Pérot structures for attenuated phase-shifting mask application in ArF and F ₂ lithography. / Chen, H. L.; Wu, H. S.; Lee, C. C.; Ko, Fu-Hsiang; Fan, Wonder; Hsieh, C. I.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6, 01.11.2003, p. 3057-3061.

Research output: Contribution to journal › Article › peer-review

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AU - Chen, H. L.

AU - Wu, H. S.

AU - Lee, C. C.

AU - Ko, Fu-Hsiang

AU - Fan, Wonder

AU - Hsieh, C. I.

PY - 2003/11/1

Y1 - 2003/11/1

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AB - A structure for an attenuated phase-shifting mask (APSM) based on a three-layer Fabry-Pérot structure in ArF and F 2 lithography was studied. Reflection and transmission spectra in the deep ultraviolet and vacuum ultraviolet regimes were measured by an optical spectrometer. Various dielectric materials were used in the tungsten films-based APSM structure in F 2 lithography. The results show that low reflectance and suitable transmittance at 157 nm can be achieved.

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SN - 1071-1023

IS - 6

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Fabry-Pérot structures for attenuated phase-shifting mask application in ArF and F 2 lithography

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Fabry-Pérot structures for attenuated phase-shifting mask application in ArF and F ₂ lithography