Fabry-Pérot structures for attenuated phase-shifting mask application in ArF and F 2 lithography

H. L. Chen*, H. S. Wu, C. C. Lee, Fu-Hsiang Ko, Wonder Fan, C. I. Hsieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

A structure for an attenuated phase-shifting mask (APSM) based on a three-layer Fabry-Pérot structure in ArF and F 2 lithography was studied. Reflection and transmission spectra in the deep ultraviolet and vacuum ultraviolet regimes were measured by an optical spectrometer. Various dielectric materials were used in the tungsten films-based APSM structure in F 2 lithography. The results show that low reflectance and suitable transmittance at 157 nm can be achieved.

Original languageEnglish
Pages (from-to)3057-3061
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
DOIs
StatePublished - 1 Nov 2003

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