A structure for an attenuated phase-shifting mask (APSM) based on a three-layer Fabry-Pérot structure in ArF and F 2 lithography was studied. Reflection and transmission spectra in the deep ultraviolet and vacuum ultraviolet regimes were measured by an optical spectrometer. Various dielectric materials were used in the tungsten films-based APSM structure in F 2 lithography. The results show that low reflectance and suitable transmittance at 157 nm can be achieved.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - 1 Nov 2003|