Fabrication of Very High Resistivity Si with Low Loss and Cross Talk

Y. H. Wu*, Albert Chin, K. H. Shih, C. C. Wu, C. P. Liao, S. C. Pai, C. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Ω-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 MΩ-cm is measured that is close to intrinsic Si and semi-insulating GaAs. Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 μm gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast approximately 1 ps carrier lifetime stable even after a 400 °C annealing for 1 h. Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 angstroms oxides.

Original languageEnglish
Pages (from-to)442-444
Number of pages3
JournalIEEE Electron Device Letters
Volume21
Issue number9
DOIs
StatePublished - Sep 2000

Keywords

  • Cross talk
  • RF loss
  • high resistivity Si

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