Fabrication of Very High Resistivity Si with Low Loss and Cross Talk

Y. H. Wu; Albert Chin; K. H. Shih; C. C. Wu; C. P. Liao; S. C. Pai; C. C. Chi

doi:10.1109/55.863105

Fabrication of Very High Resistivity Si with Low Loss and Cross Talk

Y. H. Wu^*, Albert Chin, K. H. Shih, C. C. Wu, C. P. Liao, S. C. Pai, C. C. Chi

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We have used proton and As⁺ implantation to increase the resistivity of conventional Si (10 Ω-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 MΩ-cm is measured that is close to intrinsic Si and semi-insulating GaAs. Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 μm gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast approximately 1 ps carrier lifetime stable even after a 400 °C annealing for 1 h. Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 angstroms oxides.

Original language	English
Pages (from-to)	442-444
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	9
DOIs	https://doi.org/10.1109/55.863105
State	Published - Sep 2000

Keywords

Cross talk
RF loss
high resistivity Si

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@article{a35df78094e240cf954d47216b3605c0,

title = "Fabrication of Very High Resistivity Si with Low Loss and Cross Talk",

abstract = "We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Ω-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 MΩ-cm is measured that is close to intrinsic Si and semi-insulating GaAs. Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 μm gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast approximately 1 ps carrier lifetime stable even after a 400 °C annealing for 1 h. Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 angstroms oxides.",

keywords = "Cross talk, RF loss, high resistivity Si",

author = "Wu, {Y. H.} and Albert Chin and Shih, {K. H.} and Wu, {C. C.} and Liao, {C. P.} and Pai, {S. C.} and Chi, {C. C.}",

year = "2000",

month = sep,

doi = "10.1109/55.863105",

language = "English",

volume = "21",

pages = "442--444",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Fabrication of Very High Resistivity Si with Low Loss and Cross Talk

AU - Wu, Y. H.

AU - Chin, Albert

AU - Shih, K. H.

AU - Wu, C. C.

AU - Liao, C. P.

AU - Pai, S. C.

AU - Chi, C. C.

PY - 2000/9

Y1 - 2000/9

N2 - We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Ω-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 MΩ-cm is measured that is close to intrinsic Si and semi-insulating GaAs. Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 μm gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast approximately 1 ps carrier lifetime stable even after a 400 °C annealing for 1 h. Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 angstroms oxides.

AB - We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Ω-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 MΩ-cm is measured that is close to intrinsic Si and semi-insulating GaAs. Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 μm gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast approximately 1 ps carrier lifetime stable even after a 400 °C annealing for 1 h. Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 angstroms oxides.

KW - Cross talk

KW - RF loss

KW - high resistivity Si

UR - http://www.scopus.com/inward/record.url?scp=85008016706&partnerID=8YFLogxK

U2 - 10.1109/55.863105

DO - 10.1109/55.863105

M3 - Article

AN - SCOPUS:0034258860

VL - 21

SP - 442

EP - 444

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

ER -

Fabrication of Very High Resistivity Si with Low Loss and Cross Talk

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Keywords

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