Fabrication of vertical ZnO nanowires on silicon (100) with epitaxial ZnO buffer layer

Seu Yi Li, Pang Lin, Chia Ying Lee, Mon Shu Ho, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


Vertical ZnO nanowires were successfully grown on epitaxial ZnO (002) buffer layer/Si (100) substrate. The nanowire growth process was controlled by surface morphology and orientation of the epitaxial ZnO buffer layer, which was deposited by radio-frequency (rf) sputtering. The copper catalyzed the vapor-liquid-solid growth of ZnO nanowires with diameter of ∼30 nm and length of ∼5.0 μm. The perfect wurtzite epitaxial structure (HCP structure) of the ZnO (0002) nanowires synthesized on ZnO (002) buffer layer/Si (100) substrate results in excellent optical characteristics such as strong UV emission at 380 nm with potential use in nano-optical and nano-electronic devices.

Original languageEnglish
Article number004
Pages (from-to)968-971
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number8
StatePublished - 1 Nov 2004


  • Nanowires
  • Photoluminescence
  • Transmission Electron Microscopy
  • Vapor-Liquid-Solid Growth
  • X-ray Diffraction
  • ZnO

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