Fabrication of trench-gate power MOSFETs by using a dual doped body region

M. H. Juang*, W. T. Chen, C. I. Ou-Yang, S. L. Jang, M. J. Lin, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

Fabrication of trench-gate power MOSFETs by using a dual doped body region has been proposed to further improve the device performance. For the usual scheme that employs a uniform doped body region, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 1.0 Ωcm can be obtained via the proper choice of trench depth, epitaxial thickness, and body doping concentration. On the other hand, a dual doped body region is produced by dual high-energy and low-energy implantation of boron dopant. By this scheme, a device with a blocking voltage larger than 30 V and a specific on-state resistance of about 0.8 Ωcm can be further achieved. Hence, with reducing the cell pitch size to be below 2 μm, this device fabrication scheme should be promising and practical for achieving a specific on-resistance smaller than 0.1 mΩcm2 and a blocking voltage higher than 30 V.

Original languageEnglish
Pages (from-to)1079-1085
Number of pages7
JournalSolid-State Electronics
Volume48
Issue number7
DOIs
StatePublished - 1 Jul 2004

Fingerprint Dive into the research topics of 'Fabrication of trench-gate power MOSFETs by using a dual doped body region'. Together they form a unique fingerprint.

  • Cite this

    Juang, M. H., Chen, W. T., Ou-Yang, C. I., Jang, S. L., Lin, M. J., & Cheng, H-C. (2004). Fabrication of trench-gate power MOSFETs by using a dual doped body region. Solid-State Electronics, 48(7), 1079-1085. https://doi.org/10.1016/j.sse.2003.07.007