Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects

Cheng Wei Chou*, Yung Chun Wu, Yuan Chun Wu, Ting Chang Chang, Po-Tsun Liu, Jen Chung Lou, Wen Jun Huang, Chun Yen Chang, Simon M. Sze

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A pattern-dependent metal-induced lateral crystallized (PDMLC) poly-Si thin film transistor was successfully demonstrated and characterized. The fabrication of new PDMLC is simple with only four-mask process. After NH 3 plasma passivation, the device performance was enhanced, including the high on/off current ratio (>106), the high mobility (31.19 cm2/Vs), and the steep subthreshold swing (0.483 V/dec). The performance of PDMLC TFT with NH3 plasma passivation is superior to that of the counterpart without NH3 plasma passivation. The NH 3 plasma treatment can result in the effective hydrogen passivation of the grain-boundary dangling bonds, and the nitrogen pile-up at SiO 2/poly-Si interface.

Original languageEnglish
Title of host publicationProceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
EditorsH.P. David Shieh, F.C. Chen
Pages517-519
Number of pages3
StatePublished - 1 Dec 2005
EventInternational Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
Duration: 21 Feb 200524 Feb 2005

Publication series

NameInternational Display Manufacturing Conference and Exhibition, IDMC'05

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
CountryJapan
CityTaipei
Period21/02/0524/02/05

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