A pattern-dependent metal-induced lateral crystallized (PDMLC) poly-Si thin film transistor was successfully demonstrated and characterized. The fabrication of new PDMLC is simple with only four-mask process. After NH 3 plasma passivation, the device performance was enhanced, including the high on/off current ratio (>106), the high mobility (31.19 cm2/Vs), and the steep subthreshold swing (0.483 V/dec). The performance of PDMLC TFT with NH3 plasma passivation is superior to that of the counterpart without NH3 plasma passivation. The NH 3 plasma treatment can result in the effective hydrogen passivation of the grain-boundary dangling bonds, and the nitrogen pile-up at SiO 2/poly-Si interface.