Fabrication of p-channel polycrystalline Si1-xGex thin-film transistors by ultrahigh vacuum chemical vapor deposition

Horng-Chih Lin*, Tze Guei Jung, Hsiao Yi Lin, Chun Yen Chang, L. P. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

In this report, we present a novel approach for fabricating polycrystalline silicon-germanium thin-film transistors at low temperatures (≤550°C). A bottom gate configuration is used for this approach, and an i-Si 1-xGex/i-Si/p+-Si1-yGey multilayer is deposited sequentially on the gate oxide using an ultra-high vacuum chemical vapor deposition technique. The i-Si1-xGex serves as the channel while the i-Si is used as a buffer layer for allowing p+-Si1-yGey to be etched selectively on. p-channel thin-film transistors with a field-effect mobility of 13 cm 2/V s were achieved using this method, which is superior to those grown by low pressure chemical vapor deposition. Our results indicate that the deposition of poly-Si1-xGex/poly-Si multilayer structure would be a promising way for polycrystalline thin-film device applications.

Original languageEnglish
Pages (from-to)1700-1702
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number13
DOIs
StatePublished - 1 Dec 1994

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