Fabrication of nitride LEDs

Ray-Hua Horng*, D. S. Wuu, C. F. Lin, C. F. Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

Abstract

In this chapter, we discuss the flip-chip and thin-film types of GaN-based light-emitting diode (LED), which are used to produce devices with better light extraction efficiency and far-field distribution. Flip-chip LEDs (FCLEDs) with a micro-pillar array structure and FCLEDs with a geometric oblique sapphire structure are investigated. Thin-film LEDs (TFLEDs) are fabricated by a combination of wafer bonding and the laser lift-off technique, which are used to transfer the GaN epilayer to a more conductive substrate to give better thermal dissipation. GaN TFLEDs with a photonic crystal (PC) surface structure are demonstrated. This study examines the light extraction efficiency, directional far-field patterns and polarization properties of GaN PC TFLEDs.

Original languageEnglish
Title of host publicationNitride Semiconductor Light-Emitting Diodes (LEDs)
Subtitle of host publicationMaterials, Technologies and Applications
PublisherElsevier Ltd
Pages181-215
Number of pages35
ISBN (Print)9780857095077
DOIs
StatePublished - 1 Dec 2013

Keywords

  • Flip-chip LED (FCLED)
  • Gallium nitride (GaN)
  • Light-emitting diode (LED)
  • Photonic crystal (PC)
  • Thin-film LED (TFLED)

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