Abstract
In this paper, we present the performance of Si heterojunction solar cells prepared by hot-wire chemical vapor deposition and laser annealing. Under high hydrogen-dilution-ratio conditions, the crystallinity of the phosphorous-doped emitter layers was greatly improved due to hydrogen-induced crystallization. The grain boundary defects of the nano-crystalline emitter layer were further promoted using a laser (355 nm) crystallization technique. It was found that both the short-circuit current density and fill factor of the Si heterojunction solar cells were mainly dependent on the energy density of the laser beam. An efficiency of 14.2% is achieved for the n-nc-Si/p-c-Si heterojunction solar cell under a laser irradiation density of 382 mW/cm2.
Original language | English |
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Pages (from-to) | 993-995 |
Number of pages | 3 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 93 |
Issue number | 6-7 |
DOIs | |
State | Published - 1 Jun 2009 |
Keywords
- Conversion efficiency
- Hot-wire chemical vapor deposition
- Laser annealing
- Silicon heterojunction solar cells