Abstract
A method to fabricate nano-scale Cu bond pads for improving bonding quality in 3D integration applications is reported. The effect of Cu bonding quality on inter-level via structural reliability for 3D integration applications is investigated. We developed a Cu nano-scale-height bond pad structure and fabrication process for improved bonding quality by recessing oxides using a combination of SiO2 CMP process and dilute HF wet etching. In addition, in order to achieve improved waferlevel bonding, we introduced a seal design concept that prevents corrosion and provides extra mechanical support. Demonstrations of these concepts and processes provide the feasibility of reliable nano-scale 3D integration applications.
Original language | English |
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Pages (from-to) | 3336-3339 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 11 |
Issue number | 4 |
DOIs | |
State | Published - 1 Dec 2011 |
Keywords
- 3D integration
- Cu
- Seal
- Wafer bonding