Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography

K. B. Nguyen; G. F. Cardinale; D. A. Tichenor; G. D. Kubiak; K. Berger; A. K. Ray-Chaudhuri; Y. Perras; S. J. Haney; R. Nissen; K. Krenz; R. H. Stulen; H. Fujioka; Chen-Ming Hu; J. Bokor; D. M. Tennant; L. A. Fetter

doi:10.1116/1.588618

Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography

K. B. Nguyen^*, G. F. Cardinale, D. A. Tichenor, G. D. Kubiak, K. Berger, A. K. Ray-Chaudhuri, Y. Perras, S. J. Haney, R. Nissen, K. Krenz, R. H. Stulen, H. Fujioka, Chen-Ming Hu, J. Bokor, D. M. Tennant, L. A. Fetter

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This article reports results from the successful fabrication of metal-oxide-semiconductor (MOS) devices with extreme ultraviolet lithography, n-type MOS transistors with gate lengths of 0.1 μm were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.

Original language	English
Pages (from-to)	4188-4192
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	14
Issue number	6
DOIs	https://doi.org/10.1116/1.588618
State	Published - 1 Nov 1996

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Nguyen, K. B., Cardinale, G. F., Tichenor, D. A., Kubiak, G. D., Berger, K., Ray-Chaudhuri, A. K., Perras, Y., Haney, S. J., Nissen, R., Krenz, K., Stulen, R. H., Fujioka, H., Hu, C-M., Bokor, J., Tennant, D. M., & Fetter, L. A. (1996). Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14(6), 4188-4192. https://doi.org/10.1116/1.588618

Nguyen, K. B. ; Cardinale, G. F. ; Tichenor, D. A. ; Kubiak, G. D. ; Berger, K. ; Ray-Chaudhuri, A. K. ; Perras, Y. ; Haney, S. J. ; Nissen, R. ; Krenz, K. ; Stulen, R. H. ; Fujioka, H. ; Hu, Chen-Ming ; Bokor, J. ; Tennant, D. M. ; Fetter, L. A. / Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1996 ; Vol. 14, No. 6. pp. 4188-4192.

@article{f26cc9b12323400aa4a603e73e22ce3a,

title = "Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography",

abstract = "This article reports results from the successful fabrication of metal-oxide-semiconductor (MOS) devices with extreme ultraviolet lithography, n-type MOS transistors with gate lengths of 0.1 μm were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.",

author = "Nguyen, {K. B.} and Cardinale, {G. F.} and Tichenor, {D. A.} and Kubiak, {G. D.} and K. Berger and Ray-Chaudhuri, {A. K.} and Y. Perras and Haney, {S. J.} and R. Nissen and K. Krenz and Stulen, {R. H.} and H. Fujioka and Chen-Ming Hu and J. Bokor and Tennant, {D. M.} and Fetter, {L. A.}",

year = "1996",

month = nov,

day = "1",

doi = "10.1116/1.588618",

language = "English",

volume = "14",

pages = "4188--4192",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

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Nguyen, KB, Cardinale, GF, Tichenor, DA, Kubiak, GD, Berger, K, Ray-Chaudhuri, AK, Perras, Y, Haney, SJ, Nissen, R, Krenz, K, Stulen, RH, Fujioka, H, Hu, C-M, Bokor, J, Tennant, DM & Fetter, LA 1996, 'Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 14, no. 6, pp. 4188-4192. https://doi.org/10.1116/1.588618

Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography. / Nguyen, K. B.; Cardinale, G. F.; Tichenor, D. A.; Kubiak, G. D.; Berger, K.; Ray-Chaudhuri, A. K.; Perras, Y.; Haney, S. J.; Nissen, R.; Krenz, K.; Stulen, R. H.; Fujioka, H.; Hu, Chen-Ming; Bokor, J.; Tennant, D. M.; Fetter, L. A.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 14, No. 6, 01.11.1996, p. 4188-4192.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography

AU - Nguyen, K. B.

AU - Cardinale, G. F.

AU - Tichenor, D. A.

AU - Kubiak, G. D.

AU - Berger, K.

AU - Ray-Chaudhuri, A. K.

AU - Perras, Y.

AU - Haney, S. J.

AU - Nissen, R.

AU - Krenz, K.

AU - Stulen, R. H.

AU - Fujioka, H.

AU - Hu, Chen-Ming

AU - Bokor, J.

AU - Tennant, D. M.

AU - Fetter, L. A.

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Y1 - 1996/11/1

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AB - This article reports results from the successful fabrication of metal-oxide-semiconductor (MOS) devices with extreme ultraviolet lithography, n-type MOS transistors with gate lengths of 0.1 μm were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.

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