Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography

K. B. Nguyen*, G. F. Cardinale, D. A. Tichenor, G. D. Kubiak, K. Berger, A. K. Ray-Chaudhuri, Y. Perras, S. J. Haney, R. Nissen, K. Krenz, R. H. Stulen, H. Fujioka, Chen-Ming Hu, J. Bokor, D. M. Tennant, L. A. Fetter

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

This article reports results from the successful fabrication of metal-oxide-semiconductor (MOS) devices with extreme ultraviolet lithography, n-type MOS transistors with gate lengths of 0.1 μm were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.

Original languageEnglish
Pages (from-to)4188-4192
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume14
Issue number6
DOIs
StatePublished - 1 Nov 1996

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    Nguyen, K. B., Cardinale, G. F., Tichenor, D. A., Kubiak, G. D., Berger, K., Ray-Chaudhuri, A. K., Perras, Y., Haney, S. J., Nissen, R., Krenz, K., Stulen, R. H., Fujioka, H., Hu, C-M., Bokor, J., Tennant, D. M., & Fetter, L. A. (1996). Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14(6), 4188-4192. https://doi.org/10.1116/1.588618