Abstract
This article reports results from the successful fabrication of metal-oxide-semiconductor (MOS) devices with extreme ultraviolet lithography, n-type MOS transistors with gate lengths of 0.1 μm were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.
Original language | English |
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Pages (from-to) | 4188-4192 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 14 |
Issue number | 6 |
DOIs | |
State | Published - 1 Nov 1996 |